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David G. Goodwin B.S., Harvey Mudd College, 1979; M.S., Stanford University, 1980; Ph.D., Stanford University, 1986 1200 East California Boulevard | website
Research Much of Professor Goodwin's research concerns the growth of thin films by chemical vapor deposition (CVD), which is an important process for the manufacture of integrated circuits, semiconductor lasers, micro-electrical-mechanical systems (MEMS) devices, optical components, and many other products. Research in this area is interdisciplinary, drawing on the fields of heat transfer, fluid mechanics, control, chemistry, and materials science, among others. Work in Professor Goodwin's group combines experiment and modeling, both of which are necessary to understand complex processes like CVD. Most members of this research group are currently involved in a large-scale, interdisciplinary project focused on deposition of thin films of the high-temperature superconductor YBCO and related oxides. Work in this area includes experimental studies of film growth, development of in-situ spectroscopic diagnostic methods, atomistic simulation of film growth processes, and development of simulation tools that couple models for flow, chemistry, film growth, sensors, and control. Other current interests include hot-wire CVD of amorphous hydrogenated silicon, CVD of diamond films, the coupling of particle and continuum methods in reacting flow simulations, and the development of advanced software tools for studying such flows. |
